Flexible Electronics News

InnoScience Powers GaN Device Development with Multiple AIXTRON MOCVD Systems

AIX G5+ C high-volume manufacturing platform paves the way to high-performing 650V GaN-on-Si devices.

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By: Anthony Locicero

Copy editor, New York Post

AIXTRON SE will deliver multiple AIX G5+ C MOCVD systems to InnoScience Technology Co., Ltd. (China) for the development of GaN power devices which are more and more favored over Si power devices in various applications due to their superior performance at high frequency. All AIXTRON cluster tools will feature a 5×200 mm configuration and will be shipped until Q2/2019. GaN power devices have very low conduction loss, switching loss and off state loss compared to the traditional Si-based...

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